CONVECTIVE AND ABSOLUTE INSTABILITIES IN SEMICONDUCTORS EXHIBITING NEGATIVE DIFFERENTIAL MOBILITY

被引：32

作者：

GUERET, P

机构：

来源：

PHYSICAL REVIEW LETTERS | 1971年 / 27卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.27.256

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：256 / +

页数：1

相关论文

共 8 条

[1] BRIGGS R, 1964, ELECTRON STREAM INTE
[2] NONLINEAR SPACE-CHARGE DOMAIN DYNAMICS IN A SEMICONDUCTOR WITH NEGATIVE DIFFERENTIAL MOBILITY
KROEMER, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 27 - +
[3] MAGARSCHACK J, 1970, 1970 P IEEE INT SOL, V13, P134
[4] MAGARSCHACK J, 1970, 8 P INT C MICR OPT G
[5] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
MCCUMBER, DE
CHYNOWETH, AG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 4 - +
[6] MIRCEA A, 1969 P DEV RES C ROC
[7] EXPERIMENTAL VERIFICATION OF BISTABLE SWITCHING WITH GUNN DIODES
THIM, H
[J]. ELECTRONICS LETTERS, 1971, 7 (10) : 246 - &
[8] WESSELBERG T, 1965, 1315 STANF U MICR LA