CHARACTERIZATION OF SI/COSI2/SI(111) HETEROSTRUCTURES USING AUGER PLASMON LOSSES

被引：4
作者：
SCHOWENGERDT, FD [1 ]
LIN, TL [1 ]
FATHAUER, RW [1 ]
GRUNTHANER, PJ [1 ]
机构：
[1] CALTECH,JET PROP LAB,PASADENA,CA 91109
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 09期
关键词：
D O I：
10.1063/1.342627
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3531 / 3538
页数：8
相关论文
共 22 条
  • [1] HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION
    CHAMBERS, SA
    ANDERSON, SB
    CHEN, HW
    WEAVER, JH
    [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 913 - 920
  • [2] INFLUENCE OF ION SPUTTERING ON THE ELEMENTAL ANALYSIS OF SOLID-SURFACES
    COBURN, JW
    [J]. THIN SOLID FILMS, 1979, 64 (03) : 371 - 382
  • [3] SILICON OVERGROWTH ON COSI2/SI(111) EPITAXIAL STRUCTURES - APPLICATION TO PERMEABLE BASE TRANSISTOR
    DAVITAYA, FA
    CHROBOCZEK, JA
    DANTERROCHES, C
    GLASTRE, G
    CAMPIDELLI, Y
    ROSENCHER, E
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 463 - 469
  • [4] DECRESCENZI M, 1985, J PHYS C SOLID STATE, V18, P3595, DOI 10.1088/0022-3719/18/18/024
  • [5] STRUCTURAL AND ELECTRONIC-PROPERTIES OF COSI2 EPITAXIALLY GROWN ON SI(111)
    DERRIEN, J
    [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 171 - 183
  • [6] GRUNTHANER PJ, 1987, 2ND P INT S SIL MOL, P375
  • [7] ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS
    HENSEL, JC
    TUNG, RT
    POATE, JM
    UNTERWALD, FC
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 913 - 915
  • [8] EVIDENCE FOR SI DIFFUSION THROUGH EPITAXIAL NISI2 GROWN ON SI(111)
    HINKEL, V
    SORBA, L
    HAAK, H
    HORN, K
    BRAUN, W
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1257 - 1259
  • [9] RELATIONSHIP BETWEEN THE AUGER LINE-SHAPE AND THE ELECTRONIC-PROPERTIES OF GRAPHITE
    HOUSTON, JE
    ROGERS, JW
    RYE, RR
    HUTSON, FL
    RAMAKER, DE
    [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 1215 - 1226
  • [10] HU SM, 1973, ATOMIC DIFFUSION SEM, P220
123