ACTIVATION-ENERGY FOR THERMAL DONOR FORMATION IN SILICON

被引：47

作者：

CLAYBOURN, M

NEWMAN, RC

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2197 / 2199

页数：3

共 20 条

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[13] OXYGEN-RELATED THERMAL DONORS IN SILICON - A NEW STRUCTURAL AND KINETIC-MODEL [J].

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[14] DIFFUSIVITY OF OXYGEN IN SILICON AT THE DONOR FORMATION TEMPERATURE [J].

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PATEL, JR ;

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[15]

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[16] RAPID THERMAL ANNEALING AND REGROWTH OF THERMAL DONORS IN SILICON [J].

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SHATAS, SC .

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[17]

TAN TY, 1986, MATER RES SOC S P, V59, P195

[18]

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[19]

Watkins G. D., 1986, Materials Science Forum, V10-12, P953, DOI 10.4028/www.scientific.net/MSF.10-12.953

[20]

WRUCK D, 1986, PHYS STATUS SOLIDI B, V133, pL39

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