ACTIVATION-ENERGY FOR THERMAL DONOR FORMATION IN SILICON

被引：47
作者：
CLAYBOURN, M
NEWMAN, RC
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期
关键词：
D O I：
10.1063/1.98938
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2197 / 2199
页数：3
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