ACTIVATION-ENERGY FOR THERMAL DONOR FORMATION IN SILICON

被引：47

作者：

CLAYBOURN, M

NEWMAN, RC

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2197 / 2199

页数：3

共 20 条

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[2] DEPLETION OF INTERSTITIAL OXYGEN IN SILICON AND THE THERMAL DONOR MODEL
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1287 - 1289
[3] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02): : 79 - 92
[4] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON
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[5] KIMERLING LC, 1986, MATER RES SOC S P, V59, P83
[6] ELECTRICAL AND OPTICAL CHARACTERIZATION OF THERMAL DONORS IN SILICON
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02): : K181 - K184
[7] SOME NEW FEATURES OF THERMAL DONOR FORMATION IN SILICON AT T-LESS-THAN-800-K
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MAKARENKO, LF
MURIN, LI
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (02): : K173 - K176
[8] Mikkelsen J C, 1985, MATER RES SOC S P, V59, P19
[9] THERMAL DONORS IN SILICON - OXYGEN CLUSTERS OR SELF-INTERSTITIAL AGGREGATES
NEWMAN, RC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (30): : L967 - L972
[10] THE EFFECT OF METALLIC CONTAMINATION ON ENHANCED OXYGEN DIFFUSION IN SILICON AT LOW-TEMPERATURES
NEWMAN, RC
TIPPING, AK
TUCKER, JH
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (27): : L861 - L866

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