共 50 条
- [1] Effect of laser processing on gallium arsenide device structures 14th International Crimean Conference: Microwave & Telecommunication Technology, Conference Proceedings, 2004, : 549 - 550
- [2] RECOMBINATION PROPERTIES OF GALLIUM-ARSENIDE EPITAXIAL STRUCTURES ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (06): : 170 - 171
- [8] SOME PROPERTIES OF DIODE STRUCTURES MADE OF SEMIINSULATING GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1460 - &