PHOTOREFLECTANCE OF GALLIUM-ARSENIDE

被引：0

作者：

MARONCHUK, YE ^{[1
]}

SHERSTYAKOV, AP ^{[1
]}

TOKAREV, AS ^{[1
]}

机构：

[1] ACAD SCI USSR, SEMIDCOND PHYS INST, NOVOSIBRISK, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 7卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：386 / 389

页数：4

共 22 条

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[6] HALL-EFFECT LEVELS PRODUCED IN TE-DOPED GAAS CRYSTALS BY CU DIFFUSION [J].

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[7]

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[8]

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[9]

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[10] REFLECTANCE MODULATION BY SURFACE FIELD IN GAAS [J].

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