SINGLE-WORD MULTIPLE-BIT UPSETS IN STATIC RANDOM-ACCESS DEVICES

被引：25

作者：

KOGA, R

PINKERTON, SD

LIE, TJ

CRAWFORD, KB

机构：

[1] The Aerospace Corporation, Los Angeles, CA, 90009

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273460

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Space-borne electronics systems incorporating high-density static random access memory (SRAM) are vulnerable to single-word multiple-bit upsets (SMUs). We review here recent observations of SMU, present the results of a systematic investigation of the physical cell arrangements employed in several currently available SRAM device types, and discuss implications for the occurrence and mitigation of SMU.

引用

收藏

页码：1941 / 1946

页数：6

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