EFFECT OF ELECTRON-HOLE PAIRS ON THE MELTING OF SILICON

被引：42

作者：

BOK, J

机构：

来源：

PHYSICS LETTERS A | 1981年 / 84卷 / 08期

关键词：

D O I：

10.1016/0375-9601(81)91007-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：448 / 450

页数：3

共 15 条

[1] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :137-140

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[3]

BAGLEY BG, 1979, MATERIALS, P97

[4] LASER ANNEALING OF DAMAGED SILICON COVERED WITH A METAL-FILM - TEST FOR EPITAXIAL-GROWTH FROM THE MELT [J].

BENTINI, GG ;

COHEN, C ;

DESALVO, A ;

DRIGO, AV .

PHYSICAL REVIEW LETTERS, 1981, 46 (02) :156-159

[5]

BROOKS H, 1955, ADV ELECTRON, V7, P83

[6]

GODEFROY LR, 1962, 1962 P INT C PHYS SE

[7] EFFECT OF ELECTRON-HOLE PAIRS ON PHONON FREQUENCIES IN SI RELATED TO TEMPERATURE-DEPENDENCE OF BAND-GAPS [J].

HEINE, V ;

VANVECHTEN, JA .

PHYSICAL REVIEW B, 1976, 13 (04) :1622-1626

[8] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS [J].

KHAIBULLIN, IB ;

SHTYRKOV, EI ;

ZARIPOV, MM ;

BAYAZITOV, RM ;

GALJAUTDINOV, MF .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :225-233

[9] DIELECTRIC SCREENING MODEL FOR LATTICE VIBRATIONS OF DIAMOND-STRUCTURE CRYSTALS [J].

MARTIN, RM .

PHYSICAL REVIEW, 1969, 186 (03) :871-&

[10] COVALENT BOND IN CRYSTALS .I. ELEMENTS OF A STRUCTURAL THEORY [J].

PHILLIPS, JC .

PHYSICAL REVIEW, 1968, 166 (03) :832-&

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