EFFECTS OF SIASBEAS INTERFACE STRUCTURE ON THE INITIAL-STAGES OF GAAS MBE GROWTH ON SI(111)

被引：4

作者：

MAEHASHI, K

HASEGAWA, S

NAKASHIMA, H

机构：

[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, 567

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90585-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We propose a new interface structure of SiAsBeAs for eliminating the charge imbalance of GaAs on Si. We studied the effects of this chalcopyrite-type interface structure on the initial stages of GaAs MBE growth on Si (111) surfaces using RHEED and UPS measurements. It is found that GaAs growth proceeds in a layer-by-layer mode at the initial stages on this charge balanced surface.

引用

页码：98 / 101

页数：4

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