ELECTRIC-FIELD EFFECT ON THE MINIGAP STATE IN SEMICONDUCTOR SUPERLATTICES

被引：3

作者：

HUANG, FY ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.106545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric-field effect on the confined minigap states in coupled semiconductor superlattices is studied theoretically. Due to the perturbation of periodicity in the superlattice by an applied field, delocalization of the confined states is observed. In the weak field regime, delocalization of the minigap states is similar to the quantum confined Stark effect in single quantum wells. In the strong field regime, confined states disappear, and additional states from the original superlattice miniband are introduced to form semibound states due to the mixing of localized Stark ladders with the gap mode. Our numerical simulation will have an impact on confirmation of the proposed confined states in experimental observations. Possible device applications are discussed.

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页码：710 / 712

页数：3

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