ANOMALOUS CONDUCTION PROCESSES IN AMORPHOUS INDIUM OXIDE-FILMS

被引：6

作者：

SHMUELLI, H

ROSENBAUM, R

机构：

[1] Tel Aviv University, School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Sciences, Ramat-Aviv

来源：

PHYSICA B | 1991年 / 169卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90290-U

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A transition in the resistance behavior of amorphous indium oxide In(x)Oy films from a Coulomb-gap variable-range hopping law towards a constant activation energy law has been observed at low temperatures. The magnetoconductance (MC) is strongly positive, linear in magnetic field, and increases with decreasing temperature as T-1.1 in a fixed magnetic field. The MC theories of Schirmacher and of Nguyen, Spivak, and Shklovskii qualitatively describe the MC data.

引用

页码：489 / 490

页数：2

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