INFLUENCE OF HYDROGEN PASSIVATION ON THE INFRARED-SPECTRA OF HG0.8CD0.2TE

被引：21

作者：

CHEN, YF

CHEN, WS

机构：

[1] Department of Physics, National Taiwan University, Taipei

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.106385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen passivation has been investigated in Hg0.8Cd0.2Te using infrared transmission measurements. The ability of atomic hydrogen to passivate the activities of residual impurities or defects is demonstrated by the fact that the absorption edge is moved to the short wave direction and the absorption below the energy gap is reduced after the incorporation of atomic hydrogen using an rf glow discharge system. It is also found that Hg vacancies can be effectively passivated after hydrogenation. Hydrogen injection and passivation of residual impurities or defects are also observed in Hg0.8Cd0.2Te boiled in water.

引用

收藏

页码：703 / 705

页数：3

相关论文

共 12 条

[1]

CHEEN YF, 1991, APPL PHYS LETT, V58, P493

[2] PHOTOLUMINESCENCE STUDY OF HYDROGEN PASSIVATION IN GAAS AND ALGAAS BY THE PHOTOCHEMICAL VAPOR-DEPOSITION SYSTEM [J].

CHEN, YF ;

TSAI, CS ;

CHANG, Y .

APPLIED PHYSICS LETTERS, 1990, 57 (01) :70-72

[3]

DAUTREMONTSMITH WC, 1987, APPL PHYS LETT, V49, P1980

[4] ANNEALING OF HG1-XCDXTE - HG LOSS RATES AND ANNEALING OF ION-IMPLANTATION DAMAGE [J].

DIMIDUK, KC ;

OPYD, WG ;

GIBBONS, JF ;

SIGMON, TW ;

MAGEE, TJ ;

ORMOND, RD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1661-1665

[5] SHALLOW DONORS AND D-X CENTERS NEUTRALIZATION BY ATOMIC-HYDROGEN IN GAAIAS DOPED WITH SILICON [J].

MOSTEFAOUI, R ;

CHEVALLIER, J ;

JALIL, A ;

PESANT, JC ;

TU, CW ;

KOPF, RF .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) :207-210

[6] OPTICAL-ABSORPTION EDGE IN HG0.7CD0.3TE [J].

MROCZKOWSKI, JA ;

NELSON, DA ;

MUROSAKO, R ;

ZIMMERMANN, PH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (03) :1756-1760

[7] SI DONOR NEUTRALIZATION IN HIGH-PURITY GAAS [J].

PAN, N ;

LEE, B ;

BOSE, SS ;

KIM, MH ;

HUGHES, JS ;

STILLMAN, GE ;

ARAI, K ;

NASHIMOTO, Y .

APPLIED PHYSICS LETTERS, 1987, 50 (25) :1832-1834

[8] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].

PEARTON, SJ ;

CORBETT, JW ;

SHI, TS .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03) :153-195

[9] HYDROGEN-ACCEPTOR INTERACTION IN CDTE AND ZNTE STUDIES BY PHOTOLUMINESCENCE [J].

SVOB, L ;

MARFAING, Y .

SOLID STATE COMMUNICATIONS, 1986, 58 (06) :343-346

[10] HYDROGEN INJECTION AND NEUTRALIZATION OF BORON ACCEPTORS IN SILICON BOILED IN WATER [J].

TAVENDALE, AJ ;

WILLIAMS, AA ;

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1986, 48 (09) :590-592