OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI

The transmission spectra of a-Si1-xHx alloys prepared under various combinations of substrate temperature Ts and hydrogen partial pressure pH have been measured over the region of the spectrum encompassing the absorption edge. The dependence of the refractive index on Ts and pH and the photon energy has been established. The displacement of the absorption edge with Ts and pH has been studied and related to the hydrogen content of the films and the detailed parameters of deposition. Changes in the absorption edge spectrum resulting from annealing have been correlated with the evolution of hydrogen. The addition of P and B dopants produces absorption at photon energies below the edge of the undoped material. Finally, the temperature dependence of the absorption edge between 4 and 300 K has been measured. © 1979 The American Physical Society.