DEEP LEVELS IN SCANNED ELECTRON-BEAM ANNEALED SILICON

被引：20

作者：

JOHNSON, NM ^{[1
]}

REGOLINI, JL ^{[1
]}

BARTELINK, DJ ^{[1
]}

GIBBONS, JF ^{[1
]}

RATNAKUMAR, KN ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 06期

关键词：

D O I：

10.1063/1.91525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：425 / 428

页数：4

共 14 条

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[2] ELECTRONIC DEFECT LEVELS IN SELF-IMPLANTED CW LASER-ANNEALED SILICON [J].

JOHNSON, NM ;

GOLD, RB ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :704-706

[3] CONSTANT-CAPACITANCE DLTS MEASUREMENT OF DEFECT-DENSITY PROFILES IN SEMICONDUCTORS [J].

JOHNSON, NM ;

BARTELINK, DJ ;

GOLD, RB ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4828-4833

[4]

JOHNSON NM, LASER ELECTRON BEAM

[5]

JOHNSON NM, 1979, AIP C P, V50, P550

[6]

Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221

[7]

Kimerling L. C., 1979, International Conference on Defects and Radiation Effects in Semiconductors, P273

[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[9] ENHANCED DIFFUSION IN SI AND GE BY LIGHT ION IMPLANTATION [J].

MINEAR, RL ;

GIBBONS, JF ;

NELSON, DG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3468-&

[10]

RATNAKUMAR KN, 1979, APPL PHYS LETT, V35, P463, DOI 10.1063/1.91170

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