AUGER ELECTRON CONDUCTIVITY IN SILICON .2.

[1] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &

[2] OPTICAL PROPERTIES OF TELLURIUM AS AN ISOELECTRONIC TRAP IN CADMIUM SULFIDE [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1573 - &

[3] LUMINESCENCE AND FREE CARRIER DECAY TIMES IN SEMICONDUCTORS CONTAINING ISOELECTRONIC TRAPS .1. [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 739 - &

[4] DEAN PJ, PRIVATE COMMUNICATIO

[5] ISOELECTRONIC DONORS AND ACCEPTORS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (06) : 312 - &

[6] LEVITT RS, 1961, J PHYS CHEM SOLIDS, V22, P269

[7] AUGER RECOMBINATION OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE AND SILICON [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (25) : 1262 - &

[8] PIAGGIO HTH, 1956, DIFFERENTIAL EQUATIO, P201

[9] [No title captured]

[1] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &

[2] OPTICAL PROPERTIES OF TELLURIUM AS AN ISOELECTRONIC TRAP IN CADMIUM SULFIDE [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1573 - &

[3] LUMINESCENCE AND FREE CARRIER DECAY TIMES IN SEMICONDUCTORS CONTAINING ISOELECTRONIC TRAPS .1. [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 739 - &

[4] DEAN PJ, PRIVATE COMMUNICATIO

[5] ISOELECTRONIC DONORS AND ACCEPTORS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (06) : 312 - &

[6] LEVITT RS, 1961, J PHYS CHEM SOLIDS, V22, P269

[7] AUGER RECOMBINATION OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE AND SILICON [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (25) : 1262 - &

[8] PIAGGIO HTH, 1956, DIFFERENTIAL EQUATIO, P201

[9] [No title captured]