AUGER ELECTRON CONDUCTIVITY IN SILICON .2.

被引：10
作者：
CUTHBERT, JD
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 02期
关键词：
D O I：
10.1063/1.1660090
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：747 / &
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共 9 条
[1]   FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J].
CUTHBERT, JD ;
THOMAS, DG .
PHYSICAL REVIEW, 1967, 154 (03) :763-&
[2]   OPTICAL PROPERTIES OF TELLURIUM AS AN ISOELECTRONIC TRAP IN CADMIUM SULFIDE [J].
CUTHBERT, JD ;
THOMAS, DG .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1573-&
[3]   LUMINESCENCE AND FREE CARRIER DECAY TIMES IN SEMICONDUCTORS CONTAINING ISOELECTRONIC TRAPS .1. [J].
CUTHBERT, JD .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :739-&
[4]  
DEAN PJ, PRIVATE COMMUNICATIO
[5]   ISOELECTRONIC DONORS AND ACCEPTORS [J].
HOPFIELD, JJ ;
THOMAS, DG ;
LYNCH, RT .
PHYSICAL REVIEW LETTERS, 1966, 17 (06) :312-&
[6]  
LEVITT RS, 1961, J PHYS CHEM SOLIDS, V22, P269
[7]   AUGER RECOMBINATION OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE AND SILICON [J].
NELSON, DF ;
CUTHBERT, JD ;
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW LETTERS, 1966, 17 (25) :1262-&
[8]  
PIAGGIO HTH, 1956, DIFFERENTIAL EQUATIO, P201
[9]  
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