EXCESS NOISE SOURCES DUE TO DEFECTS IN FORWARD BIASED JUNCTIONS

被引：33
作者：
BLASQUEZ, G
机构：
来源：
SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 11-1期
关键词：
D O I：
10.1016/0038-1101(78)90219-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1425 / 1430
页数：6
相关论文
共 26 条
[1]   CONDUCTION AND LOW-FREQUENCY NOISE PHENOMENA ASSOCIATED WITH SURFACE REGIONS OF P-N-JUNCTIONS - APPLICATION TO JUNCTION TRANSISTOR [J].
BLASQUEZ, G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (01) :207-218
[2]  
BLASQUEZ G, 1973, THESIS U TOULOUSE
[3]  
BRODERSEN AJ, 1971, C BRUIT FOND COMPOSA
[4]   EXCESS NOISE IN DEFORMED GERMANIUM [J].
BROPHY, JJ .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (11) :1383-1384
[5]  
CONTI M, 1974, IEEE SSC, V3
[6]  
CONTI M, 1974, IEEE SSC, V9
[7]   EXCESS SURFACE CURRENTS IN P-N JUNCTIONS AND BIPOLAR TRANSISTORS [J].
ESTEVE, D ;
MARTINOT, H .
SOLID-STATE ELECTRONICS, 1971, 14 (08) :693-&
[8]  
GIRALT G, 1966, ELECTRON LETT, V2, P228
[9]  
GIRALT G, 1966, ELECTRON LETT, V6
[10]   EFFECTS OF DISLOCATIONS ON NOISE OF PLANAR P-N JUNCTIONS [J].
GREEN, D ;
JORDAN, AG .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1969, 27 (02) :159-&
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