DIRECT EVIDENCE SUPPORTING THE PREMISES OF A TWO-DIMENSIONAL DIODE MODEL FOR THE PARASITIC THYRISTOR IN CMOS CIRCUITS BUILT ON THIN EPI

被引：6

作者：

CHATTERJEE, A

SEITCHIK, JA

CHERN, JH

YANG, P

WEI, CC

机构：

来源：

关键词：

D O I：

10.1109/55.17827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：509 / 511

页数：3

共 10 条

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