RADIATION-HARDENED CMOS DEVICES FOR LINEAR CIRCUIT APPLICATIONS

被引:5
作者
SANDERS, TJ
PORTS, KA
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D O I
10.1109/TNS.1978.4329554
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1465 / 1468
页数:4
相关论文
共 3 条
[1]   PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].
DERBENWICK, GF ;
GREGORY, BL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2151-2156
[2]   DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES [J].
HUGHES, HL ;
BAXTER, RD ;
PHILLIPS, B .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) :256-263