IMPURITY INDUCED VIBRATIONS IN LIGHT DOPED SILICON

被引：6

作者：

FU, Y ^{[1
]}

XU, WL ^{[1
]}

ZHENG, ZB ^{[1
]}

机构：

[1] UNIV SCI & TECHNOL CHINA, HEFEI, PEOPLES R CHINA

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 62卷 / 03期

关键词：

CRYSTALS - Physical Properties;

D O I：

10.1016/0038-1098(87)90183-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The local densities of states (LDOSs) are calculated by use of the recursion method for the lithium or phosphorous-compensated boron-doped crystalline silicon. The impurity induced local and quasi-local vibrational modes are studied. Agreement between experiments and calculation is achieved.

引用

页码：163 / 167

页数：5

共 7 条

[1] A STUDY OF VIBRATIONS OF BORON AND PHOSPHORUS IN SILICON BY INFRA-RED ABSORPTION [J].