ELECTRICAL AND OPTICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER ON A CLEAVED SURFACE OF THE LAYERED SEMICONDUCTOR INSE

被引：54
作者：
HASEGAWA, Y
ABE, Y
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 70卷 / 02期
关键词：
D O I：
10.1002/pssa.2210700230
中图分类号：
T [工业技术];
学科分类号：
08 ;
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页码：615 / 621
页数：7
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