ELECTRONIC-STRUCTURE OF THE SI-(111) RECONSTRUCTED SURFACE IN THE VACANCY MODEL

被引：3
|
作者：
NAGAYOSHI, H [1 ]
TSUKADA, M [1 ]
机构：
[1] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN
来源：
SURFACE SCIENCE | 1982年 / 116卷 / 02期
关键词：
D O I：
10.1016/0039-6028(82)90425-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：163 / 176
页数：14
相关论文
共 50 条
  • [31] ATOMIC AND ELECTRONIC-STRUCTURE OF SI(111)7X7 SURFACE
    PANDEY, KC
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 399 - 399
  • [32] SURFACE ELECTRONIC-STRUCTURE OF CLEAVED SI(111)-(2X1)
    HIMPSEL, FJ
    HEIMANN, P
    EASTMAN, DE
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 351 - 351
  • [33] ADATOM ELECTRONIC-STRUCTURE OF THE SI(111)7X7 SURFACE
    NICHOLLS, JM
    REIHL, B
    PHYSICAL REVIEW B, 1987, 36 (15): : 8071 - 8074
  • [34] PHOTOEMISSION STUDIES OF SURFACE ELECTRONIC-STRUCTURE OF SI (111) AND OXYGEN-CHEMISORPTION
    GARNER, CM
    LINDAU, I
    MILLER, JN
    PIANETTA, P
    SPICER, WE
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 433 - 433
  • [35] ATOMIC AND ELECTRONIC-STRUCTURE OF THE NIAL(111) SURFACE
    KANG, MH
    LUI, SC
    MELE, EJ
    PLUMMER, EW
    ZEHNER, DM
    PHYSICAL REVIEW B, 1990, 41 (08): : 4920 - 4929
  • [36] ELECTRONIC-STRUCTURE OF TIC(111) POLAR SURFACE
    HOSHINO, T
    TSUKADA, M
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1983, 31-4 (FEB) : 901 - 902
  • [37] ELECTRONIC-STRUCTURE OF H CHEMISORBED ON SI(111) SURFACES
    YNDURAIN, F
    LOUIS, E
    SOLID STATE COMMUNICATIONS, 1978, 25 (07) : 439 - 441
  • [38] THE ATOMIC AND ELECTRONIC-STRUCTURE OF THE (211) (111) FACETS IN SI
    KOHYAMA, M
    KOSE, S
    KINOSHITA, M
    YAMAMOTO, R
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (43) : 8251 - 8256
  • [39] ELECTRONIC-STRUCTURE OF VACANCIES IN SI(111) UNRECONSTRUCTED SURFACES
    VERGES, JA
    LOUIS, E
    PHYSICAL REVIEW B, 1981, 23 (12): : 6676 - 6690
  • [40] ELECTRONIC-STRUCTURE OF SI AND GE(111) SURFACES AND THE SI-GE(111) INTERFACE
    AGRAWAL, BK
    PHYSICAL REVIEW B, 1985, 31 (04): : 2517 - 2520
12345