ELECTRONIC-STRUCTURE OF THE SI-(111) RECONSTRUCTED SURFACE IN THE VACANCY MODEL

被引：3
|
作者：
NAGAYOSHI, H [1 ]
TSUKADA, M [1 ]
机构：
[1] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN
来源：
SURFACE SCIENCE | 1982年 / 116卷 / 02期
关键词：
D O I：
10.1016/0039-6028(82)90425-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：163 / 176
页数：14
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