PREPARATION AND TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF CDTE/CD1-XMNXTE SINGLE QUANTUM-WELLS

In this letter, we report the preparation of CdTe/Cd0.81Mn0.19Te single quantum wells (SQW's) whose quantum well thicknesses are determined precisely. The SQW sample has been grown on a GaAs(100) substrate by means of molecular beam epitaxy. A temporal energy shift of the exciton emission is observed in a time-resolved photoluminescence measurement. The shift increases with the decrease of the well thickness. Compared with the result reported previously in the CdTe/Cd0.79Mn0.21Te SQW's with a similar well thickness on a CdTe substrate, the present energy shifts are larger. It is considered that the energy shifts observed in the present study are caused by a magnetic polaron formation of the excitons in the CdTe quantum well layers, whose wave functions penetrate into the Cd1-xMnxTe layer. The reason for the energy shift enhancement observed in the SQW's grown on the GaAs substrate is discussed.