ANDERSON TRANSITION IN SILICON INVERSION-LAYERS

被引：0

作者：

KONG, GL ^{[1
]}

LIAO, XB ^{[1
]}

YANG, XR ^{[1
]}

ZHANG, DL ^{[1
]}

LIN, SY ^{[1
]}

机构：

[1] ACAD SINICA,INST PHYS,BEIJING,PEOPLES R CHINA

来源：

CHINESE PHYSICS | 1981年 / 1卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：226 / 231

页数：6

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