ACCELERATED-DEPOSITION RATE AND HIGH-QUALITY FILM COPPER CHEMICAL-VAPOR-DEPOSITION USING A WATER-VAPOR ADDITION TO A HYDROGEN AND CU(HFA)(2) REACTION SYSTEM

被引：44

作者：

AWAYA, N

ARITA, Y

机构：

[1] NTT LSI Laboratories, Kanagawa, 243-01, 3-1 Morinosato Wakamiya, Atsugi-shi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1993年 / 32卷 / 9A期

关键词：

INTERCONNECTIONS; COPPER INTERCONNECTIONS; CHEMICAL VAPOR DEPOSITION; COPPER CVD; METAL CVD;

D O I：

10.1143/JJAP.32.3915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Accelerated-deposition-rate chemical vapor deposition (CVD) of copper is studied using hydrogen reduction of bis-hexafluoro acetylacetonate copper (Cu(HFA)2). An in-situ hydrated Cu(HFA)2 formation system using gaseous H2O addition to the hydrogen carrier gas increases the deposition rate to 90 nm/min. This is about ten times larger than that of the conventional reaction system. It also improves the surface morphology and the electrical resistivity of the deposited copper film. A high-aspect-ratio via filling by selective CVD and excellent step coverage by blanket CVD are successfully obtained with this technique.

引用

页码：3915 / 3919

页数：5

共 14 条

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