EFFECT OF ZN PARTIAL-PRESSURE DURING GROWTH ON ELECTRICAL-PROPERTIES OF ZNSE CRYSTALS GROWN FROM THE MELT

被引：3

作者：

KIKUMA, I

KIKUCHI, A

FURUKOSHI, M

机构：

[1] Department of Electronics, Ibaraki University, Hitachi, ibaraki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期

关键词：

Low resistivity; Melt growth; Zn partial pressure; ZnSes;

D O I：

10.1143/JJAP.29.L1963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes the melt growth of ZnSe crystals by a modified Bridgman method under argon pressure. A definite Zn partial pressure over the melt is maintained by controlling the temperature of a Zn zeservoir. Electrical properties of as-grown crystals depend on the temperature of the reservoir. Low-resistivity n-type crystals are obtained when the temperature of the reservoir is kept above 1040°C during growth. The resistivity of the crystals is 0.2 to 5 Ω·cm and the Hall mobility is 380 to 500 cm2/V ·s at room temperature (290±5 K). The temperature of the Zn reservoir during the cooling process after solidification also affects the electrical properties. © 1990 IOP Publishing Ltd.

引用

页码：L1963 / L1965

页数：3

共 4 条

[1] INSITU ANNEALING OF MELT-GROWN ZNSE CRYSTALS UNDER ZN PARTIAL-PRESSURE
KIKUMA, I
MATSUO, M
KOMURO, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (5A): : L531 - L534
[2] Lattice parameter of ZnSe crystals grown from melt under Zn partial pressure
Udono, H
Kikuma, I
Okada, Y
JOURNAL OF CRYSTAL GROWTH, 1998, 193 (1-2) : 39 - 42
[3] Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in situ annealing
Udono, H
Kikuma, I
Okada, Y
JOURNAL OF CRYSTAL GROWTH, 1999, 197 (03) : 466 - 470
[4] Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in situ annealing
Udono, H
Kikuma, I
Okada, Y
GROWTH, CHARACTERISATION AND APPLICATIONS OF BULK II-VIS, 1999, 78 : 466 - 470

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