Radio-Frequency Performance Degradation in CMOS Divide-by-3 Injection-Locked Frequency Divider Due to Hot Carrier Effects

被引：1
|
作者：
Jang, Sheng-Lyang [1 ]
Hsieh, Jen-Hsiang [1 ]
机构：
[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
来源：
JOURNAL OF LOW POWER ELECTRONICS | 2013年 / 9卷 / 04期
关键词：
CMOS; RF Hot Carrier Stress; Divide-by-3 Injection-Locked Frequency Divider; Locking Range; Tuning Range; Phase Noise;
D O I：
10.1166/jolpe.2013.1278
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This contribution experimentally investigates the hot carrier effects on the RF characteristics of a wide-locking range divide-by-3 injection-locked frequency divider (ILFD). The ILFD was implemented in the TSMC 0.18 mu m CMOS process. High supply voltage stresses were applied at room temperature on the ILFD. The main observed degradation is a decrease of locking range. It was also found that the phase noises in both the free-running and locked state increase with stress time and ILFD-core current and power consumptions decrease with stress time.
引用
收藏
页码：484 / 489
页数：6
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