600 MU-M/MIN LASER-INDUCED NONTHERMAL ETCHING OF GAAS IN AN HF SOLUTION

被引：1
|
作者：
WILLNER, AE
PODLESNIK, DV
OSGOOD, RM
机构：
[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027
[2] COLUMBIA UNIV,CTR TELECOMMUN RES,NEW YORK,NY 10027
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 09期
关键词：
Gallium arsenide; Semiconductor devices and materials;
D O I：
10.1049/el:19900371
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
600µm/min room-temperature photochemical aqueous etching of n-type GaAs in an HF acid based solution is reported. This rapid etch rate is achieved under UV illumination and represents more than an order of magnitude enhancement over previously reported results for solutions containing no HF acid. The process is used to fabricate deep, large-area structures such as trench formations and throughwafer via holes which would otherwise be impractical with slower direct-write techniques. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：568 / 569
页数：2
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