HIGH QUANTUM EFFICIENCY, HIGH-POWER, MODULATION DOPED GAINAS STRAINED-LAYER QUANTUM WELL LASER-DIODES EMITTING AT 1.5-MU-M

被引：84
作者：
THIJS, PJA
VANDONGEN, T
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 25期
关键词：
D O I：
10.1049/el:19891161
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1735 / 1737
页数：3
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