THEORY AND PRACTICE OF RF SPUTTERING

被引：29

作者：

DAVIDSE, PD

机构：

来源：

VACUUM | 1967年 / 17卷 / 03期

关键词：

D O I：

10.1016/0042-207X(67)93142-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：139 / &

共 22 条

[11]

HU SM, 1965, OCT EL SOC M BUFF

[12] SPUTTERING STUDIES OF INSULATORS BY MEANS OF LANGMUIR PROBES [J].

JORGENSO.GV ;

WEHNER, GK .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2672-&

[13]

LOGAN JS, UNPUBLISHED DATA

[14] THIN FILMS DEPOSITED BY BIAS SPUTTERING [J].

MAISSEL, LI ;

SCHAIBLE, PM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :237-&

[15] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J].

PLISKIN, WA ;

CONRAD, EE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) :43-&

[16] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J].

PLISKIN, WA ;

LEHMAN, HS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :1013-&

[17] EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J].

PLISKIN, WA ;

GNALL, RP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :872-873

[18]

PLISKIN WA, TO BE PUBLISHED

[19]

PLISKIN WA, 1966, MAY AM CER SOC M WAS

[20] SPUTTERING YIELDS AT VERY LOW BOMBARDING ION ENERGIES [J].

STUART, RV ;

WEHNER, GK .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) :2345-&

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