QUANTIZED CONDUCTANCE IN INGAAS POINT CONTACTS AT HIGH-TEMPERATURES

被引:8
作者
BEVER, T
HIRAYAMA, Y
TARUCHA, S
机构
[1] NTT Basic Research Laboratories, Kanagawa, 243-01
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 6A期
关键词
QUANTIZED CONDUCTANCE; INGAAS/INALAS HETEROSTRUCTURE; FOCUSED ION BEAM; INSULATION WRITING; INPLANE GATE;
D O I
10.1143/JJAP.33.L800
中图分类号
O59 [应用物理学];
学科分类号
摘要
We used focused ion beam insulation writing to fabricate quantum point contacts in the two-dimensional electron gas of an InGaAs/InAlAs heterostructure. The conductance as a function of voltage on an adjacent in-plane gate exhibited steps for temperatures up to 60 K. From the temperature and source-drain voltage and magnetic field dependence of the conductance steps, we estimated the one-dimensional subband spacing to be 15 meV.
引用
收藏
页码:L800 / L803
页数:4
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