HYDROGEN IMPLANTATION INTO CVD AMORPHOUS-SILICON

被引：11

作者：

SUZUKI, T ^{[1
]}

HIROSE, M ^{[1
]}

OSAKA, Y ^{[1
]}

机构：

[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIROSHIMA 730,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S2.91

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：91 / 94

页数：4

共 16 条

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].

ANDERSON, DA ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712

[2]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[3] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].

BRODSKY, MH ;

FRISCH, MA ;

ZIEGLER, JF ;

LANFORD, WA .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563

[4] DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J].

HASEGAWA, S ;

KASAJIMA, T ;

SHIMIZU, T .

SOLID STATE COMMUNICATIONS, 1979, 29 (01) :13-16

[5] DEFECT COMPENSATION IN DOPED CVD AMORPHOUS-SILICON [J].

HIROSE, M ;

TANIGUCHI, M ;

NAKASHITA, T ;

OSAKA, Y ;

SUZUKI, T ;

HASEGAWA, S ;

SHIMIZU, T .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :297-302

[6]

HIROSE M, 1979, 8TH P INT C AM LIQ S

[7]

Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5

[8] SPUTTERED HYDROGENATED AMORPHOUS SILICON [J].

MOUSTAKAS, TD .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :391-435

[9] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J].

MOUSTAKAS, TD ;

ANDERSON, DA ;

PAUL, W .

SOLID STATE COMMUNICATIONS, 1977, 23 (03) :155-158

[10] ELECTRONIC DENSITY OF STATES IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J].

NAKASHITA, T ;

HIROSE, M ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) :405-406

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