PHOTOCONDUCTIVE GAIN OF SEMICONDUCTOR EPITAXIAL LAYERS

被引：9
作者：
ANAGNOSTAKIS, EA
机构：
[1] Section of Solid State Physics, Department of Physics, University of Athens
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 127卷 / 01期
关键词：
D O I：
10.1002/pssa.2211270116
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A model is proposed for the interpretation of the dependence of photoconductive gain (PG) of semiconductor epitaxial layers upon photon flux and absolute temperature. The model takes into account the macroscopic potential barrier existing within the interface of the epitaxial layer/substrate devices (ESD) as well as the current/voltage characteristic of the illuminated ESD.
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收藏
页码：153 / 158
页数：6
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