RAMAN-SCATTERING FROM H-TERMINATED OR O-TERMINATED POROUS SI

被引：75

作者：

TSANG, JC

TISCHLER, MA

COLLINS, RT

机构：

[1] IBM T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期

关键词：

D O I：

10.1063/1.107054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of the crystalline structure of porous Si on the bonding of surface Si atoms to either H or O has been studied by Raman spectroscopy. H terminated porous Si shows microcrystalline character while O terminated porous Si shows atomic disorder within the Si particles.

引用

页码：2279 / 2281

页数：3

共 20 条

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