METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES

被引：31

作者：

KAR, S

DAHLKE, WE

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 09期

关键词：

D O I：

10.1063/1.1653717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：401 / +

页数：1

共 9 条

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[8]

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[9] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

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