A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS

被引：559
|
作者：
KUHN, M
机构：
来源：
SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 06期
关键词：
D O I：
10.1016/0038-1101(70)90073-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：873 / +
页数：1
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