INTERACTION OF DIFFUSING ZINC WITH VACANCIES IN GALLIUM-ARSENIDE

被引：0

|

作者：

BLASHKU, AI ^{[1
]}

BOLTAKS, BI ^{[1
]}

DZHAFAROV, TD ^{[1
]}

机构：

[1] AF IOFFE PHYSICOTECH INST USSR, LENINGRAD, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1544 / 1548

页数：5

相关论文

共 50 条

[1] INTERACTION OF DIFFUSING ZINC WITH VACANCIES IN GALLIUM ARSENIDE.
Blashku, A.I.
Boltaks, B.I.
Dzhafarov, T.D.
1600, (06):
[2] THE INTERACTION OF GOLD WITH GALLIUM-ARSENIDE
WEIZER, VG
FATEMI, NS
JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4618 - 4623
[3] AN AVERAGE LENGTH OF A DIFFUSIVE RUN OF GALLIUM VACANCIES IN GALLIUM-ARSENIDE
VELICHKO, OI
EGOROV, AA
FEDORUK, SK
DOKLADY AKADEMII NAUK BELARUSI, 1994, 38 (01): : 50 - 53
[4] MODEL FOR THE DIFFUSION OF ZINC IN GALLIUM-ARSENIDE
KAHEN, KB
APPLIED PHYSICS LETTERS, 1989, 55 (20) : 2117 - 2119
[5] ELECTRONIC STATES OF NEUTRAL VACANCIES IN GALLIUM-ARSENIDE AND PHOSPHIDE
ILIN, NP
MASTEROV, VF
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 496 - 498
[6] CARRIER AND ZINC CONCENTRATIONS FOR ZINC DIFFUSION IN GALLIUM-ARSENIDE
TING, CH
PEARSON, GL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (01) : 96 - &
[7] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL
GOSELE, U
MOREHEAD, F
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4617 - 4619
[8] LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM-ARSENIDE
BALIGA, BJ
GHANDHI, SK
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) : 410 - 415
[9] DIFFUSION MECHANISM OF ZINC AND BERYLLIUM IN GALLIUM-ARSENIDE
YU, S
TAN, TY
GOSELE, U
JOURNAL OF APPLIED PHYSICS, 1991, 69 (06) : 3547 - 3565
[10] OPEN TUBE DIFFUSION OF ZINC IN GALLIUM-ARSENIDE
SHEALY, JR
BALIGA, BJ
GHANDHI, SK
ELECTRON DEVICE LETTERS, 1980, 1 (06): : 119 - 121

← 1 2 3 4 5 →