SINGLE-CRYSTAL GROWTH AND ELECTRICAL-PROPERTIES OF CASI2

被引：17

作者：

HIRANO, T

机构：

[1] National Research Institute for Metals, Tsukuba, Ibaraki, 305, 1-2-1, Sengen

来源：

JOURNAL OF THE LESS-COMMON METALS | 1991年 / 167卷 / 02期

关键词：

D O I：

10.1016/0022-5088(91)90285-C

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Single crystals of CaSi2 were grown by a floating zone method. Like mica, the single crystals exhibited a smooth cleavage surface over extended regions. The cleavage occurred on the {111} plane. CaSi2 behaved as a metal. The electrical resistivity showed a positive temperature dependence with high residual resistivity and some crystallographic orientation dependence. The Hall measurements showed that electrons were the predominant carriers in CaSi2.

引用

页码：329 / 337

页数：9

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