STRUCTURE OF THE REDUCED TIO2(110) SURFACE DETERMINED BY SCANNING TUNNELING MICROSCOPY

被引：115

作者：

ROHRER, GS

HENRICH, VE

BONNELL, DA

机构：

[1] YALE UNIV,DEPT APPL MATH,SURFACE SCI LAB,NEW HAVEN,CT 06520

[2] UNIV PENN,DEPT MAT SCI & ENGN,PHILADELPHIA,PA 19104

来源：

SCIENCE | 1990年 / 250卷 / 4985期

关键词：

D O I：

10.1126/science.250.4985.1239

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The scanning tunneling microscope has been used to image a reduced TiO 2(110) surface in ultrahigh vacuum. Structural units with periodicities ranging from 21 to 3.4 angstroms have been clearly imaged, demonstrating that atomic resolution imaging of an ionic, wide band gap (3.2 electron volts) semiconductor is possible. The observed surface structures can be explained by a model involving ordered arrangements of two-dimensional defects known as crystallographic shear planes and indicate that the topography of nonstoichiometric oxide surfaces can be complex.

引用

页码：1239 / 1241

页数：3

共 18 条

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Bursill L. A., 1972, PROG SOLID STATE CHE, V7, P177, DOI [DOI 10.1016/0079-6786(72)90008-8, 10.1016/0079-6786(72)90008-8]

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