HIGH MICROWAVE PERFORMANCE ION-IMPLANTED GAAS-MESFETS ON INP SUBSTRATES

被引：1

作者：

WADA, M

KATO, K

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 3-1 Morinosato Wakamiya

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 03期

关键词：

Gallium arsenide; Ion implantation; Microwave devices and components;

D O I：

10.1049/el:19900133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300cm2/Vs with a carrier density of 2 x 10 17 cm-3 at room temperature. The MESFET (0.8μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported for GaAs MESFETs on InP substrates. These results demonstrate the high potential of ionimplanted MESFETs as electronic devices for high-speed InP-based OEICs. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：197 / 199

页数：3

共 7 条

[1]

KASAHAA K, 1988, I PHYS C SER, V91, P195

[2]

KATO K, 1988, 49TH AUT M JPN SOC A

[3] HIGH-PERFORMANCE GAAS-MESFETS GROWN ON INP SUBSTRATES BY MOCVD [J].