TEM CROSS-SECTIONAL INVESTIGATIONS OF THE AMORPHOUS CRYSTALLINE PHASE-TRANSITION OF ION-IMPLANTED SILICON

被引：0
作者：
BARTSCH, H
HOEHL, D
WERNER, P
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 112卷 / 02期
关键词：
D O I：
10.1002/pssa.2211120229
中图分类号：
T [工业技术];
学科分类号：
08 ;
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页码：715 / 720
页数：6
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