PHOTO-LUMINESCENCE TOPOGRAPHIC OBSERVATION OF DEFECTS IN SILICON-CRYSTALS

[1] PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (18) : 1082 - 1084

[2] DEGRADATION SOURCES IN GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 551 - 556

[3] SIMPLE METHOD FOR OBTAINING LUMINESCENT PATTERN OF DOUBLE HETEROSTRUCTURE CRYSTALS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) : 1272 - 1274

[4] DEGRADATION CHARACTERISTICS OF CW OPTICALLY PUMPED ALXGA1-XAS HETEROSTRUCTURE LASERS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (04) : 192 - 194

[5] X-RAY TOPOGRAPHIC STUDY OF DARK-SPOT DEFECTS IN GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE WAFERS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 207 - 209

[6] NAKASHIMA H, 1978, APPL PHYS LETT, V33, pR30

[7] GROWTH OF LATTICE DEFECTS IN SILICON DURING OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 3066 - &

[8] DISLOCATION ETCH FOR (100) PLANES IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) : 948 - +

[9] GENERATION OF DISLOCATIONS INDUCED BY CHEMICAL VAPOR-DEPOSITED SI3N4 FILMS ON SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (08) : 1097 - &

[10] SURFACE DAMAGE AND COPPER PRECIPITATION IN SILICON [J]. PHYSICA STATUS SOLIDI, 1963, 3 (12): : 2261 - 2273

[1] PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (18) : 1082 - 1084

[2] DEGRADATION SOURCES IN GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 551 - 556

[3] SIMPLE METHOD FOR OBTAINING LUMINESCENT PATTERN OF DOUBLE HETEROSTRUCTURE CRYSTALS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) : 1272 - 1274

[4] DEGRADATION CHARACTERISTICS OF CW OPTICALLY PUMPED ALXGA1-XAS HETEROSTRUCTURE LASERS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (04) : 192 - 194

[5] X-RAY TOPOGRAPHIC STUDY OF DARK-SPOT DEFECTS IN GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE WAFERS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 207 - 209

[6] NAKASHIMA H, 1978, APPL PHYS LETT, V33, pR30

[7] GROWTH OF LATTICE DEFECTS IN SILICON DURING OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 3066 - &

[8] DISLOCATION ETCH FOR (100) PLANES IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) : 948 - +

[9] GENERATION OF DISLOCATIONS INDUCED BY CHEMICAL VAPOR-DEPOSITED SI3N4 FILMS ON SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (08) : 1097 - &

[10] SURFACE DAMAGE AND COPPER PRECIPITATION IN SILICON [J]. PHYSICA STATUS SOLIDI, 1963, 3 (12): : 2261 - 2273