OPTICAL-PROPERTIES OF LAYERED SEMICONDUCTOR ZNIN2S4

被引：15

作者：

GIORGIANNI, U ^{[1
]}

GRASSO, V ^{[1
]}

MONDIO, G ^{[1
]}

SAITTA, G ^{[1
]}

机构：

[1] CNR,NAZL STRUTTURA MAT GRP,MESSINA,ITALY

来源：

PHYSICS LETTERS A | 1978年 / 68卷 / 02期

关键词：

D O I：

10.1016/0375-9601(78)90818-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：247 / 248

页数：2

共 9 条

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[2]

BOSACCHI A, UNPUBLISHED

[3] VALENCE BAND PHOTOEMISSION SPECTROSCOPY OF A TERNARY LAYERED SEMICONDUCTOR - ZNIN2S4 [J].

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ABBATI, I ;

BRAICOVICH, L ;

LEVY, F ;

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SOLID STATE COMMUNICATIONS, 1978, 26 (02) :99-102

[4]

GOMBIA E, 1976, PHYS STATUS SOLIDI A, V34, P651, DOI 10.1002/pssa.2210340228

[5] RECOMBINATION PROCESS OF PHOTOEXCITED CARRIERS IN ZNIN2S4 [J].

GRILLI, E ;

GUZZI, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01) :69-74

[6]

MARA S, 1971, J APPL PHYS, V42, P2061

[7] DIELECTRIC FUNCTIONS IN WAVELENGTH AND THERMALLY MODULATED SPECTROSCOPY [J].

MONDIO, G ;

SAITTA, G ;

VERMIGLIO, G .

CANADIAN JOURNAL OF PHYSICS, 1975, 53 (17) :1664-1671

[8] TRAP DISTRIBUTION IN ZNIN2S4 FROM PHOTOCONDUCTIVITY ANALYSIS [J].

SERPI, A .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (13) :1881-1892

[9] LUMINESCENCE OF ZNIN2S4 + ZNIN2S4-CU SINGLE CRYSTALS [J].

SHIONOYA, S ;

TAMOTO, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (07) :1142-&

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