EFFECT OF OXYGEN ON SURFACE STRUCTURE AND SURFACE STATES OF CLEAVED GERMANIUM(111) FACES

被引:25
作者
HENZLER, M
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D O I
10.1016/0039-6028(71)90229-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:209 / &
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共 15 条
[1]  
BOONSTRA AH, 1968, PHILIPS RES REPT S3
[2]   OXYGEN STICKING COEFFICIENTS ON CLEAN (111) SILICON SURFACES [J].
CAROSELLA, CA ;
COMAS, J .
SURFACE SCIENCE, 1969, 15 (02) :303-+
[3]   SURFACE-STATE MODELS FOR CLEAN AND OXYGEN-COVEERED GERMANIUM [J].
FRANKL, DR .
SURFACE SCIENCE, 1967, 6 (03) :334-&
[4]  
FRANKL DR, 1967, ELECTRICAL PROPERTIE
[5]  
GRANT ITP, 1968, J APPL PHYS, V39, P3129
[6]  
HEILAND G, 1961, FORTSCHR PHYS, V9, P393
[8]   EXPERIMENTAL STUDY OF ORIGIN OF SURFACE STATES ON CLEAN SURFACES [J].
HENZLER, M .
SURFACE SCIENCE, 1968, 9 (01) :31-&
[9]   LOW-ENERGY ELECTRON-DIFFRACTION STUDY OF SURFACE REACTIONS OF GERMANIUM WITH OXYGEN AND WITH IODINE .2. [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) :1411-&
[10]  
Many A., 1965, SEMICONDUCTOR SURFAC