THE EINSTEIN RELATION IN KANE-TYPE SEMICONDUCTORS

被引：34

作者：

GHATAK, KP ^{[1
]}

CHATTOPADHYAY, N ^{[1
]}

MONDAL, M ^{[1
]}

机构：

[1] UNIV CALCUTTA,COLL SCI & TECHNOL,DEPT PHYS,CALCUTTA 700009,W BENGAL,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.340151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4536 / 4539

页数：4

共 24 条

[1] A SIMPLIFIED PARABOLIC STRUCTURE FOR NARROW-GAP SEMICONDUCTORS IN THE PRESENCE OF QUANTIZING MAGNETIC-FIELDS [J].

ABIDI, STH ;

MOHAMMAD, SN .

SOLID-STATE ELECTRONICS, 1984, 27 (12) :1153-1155

[2]

ARUSHANOV EK, 1981, SOV PHYS SEMICOND+, V15, P828

[3] ON THE MODIFICATION OF THE EINSTEIN RELATION IN QUASI-ONE-DIMENSIONAL SYSTEMS OF BISMUTH [J].

BISWAS, SN ;

GHATAK, KP .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 137 (02) :K175-K180

[4]

BODNAR J, 1978, 1977 P INT C PHYS NA, P403

[5] EFFECT OF SIZE QUANTIZATION ON THE EINSTEIN RELATION IN ULTRATHIN FILMS OF NONPARABOLIC SEMICONDUCTORS [J].

CHAKRAVARTI, AN ;

GHATAK, KP ;

DHAR, A ;

GHOSH, KK ;

GHOSH, S .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (03) :165-169

[6] EFFECT OF CRYSTAL-FIELD SPLITTING ON THE EINSTEIN RELATION IN TETRAGONAL SEMICONDUCTORS [J].

CHAKRAVARTI, AN ;

GHATAK, KP ;

GHOSH, KK ;

MUKHERJEE, HM .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02) :843-852

[7] EFFECT OF BAND NON-PARABOLICITY ON THE GENERALIZED EINSTEIN RELATION FOR A SEMICONDUCTOR SUPER-LATTICE [J].

CHAKRAVARTI, AN ;

GHATAK, KP ;

GHOSH, KK ;

RAO, GB .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 111 (01) :K61-K65

[8] DIFFUSION, EINSTEIN FORMULA AND MECHANICS [J].

EMCH, GG .

JOURNAL OF MATHEMATICAL PHYSICS, 1973, 14 (12) :1775-1783

[9]

Hatchel G.D., 1968, IEEE T ELECTRON DEV, V15, P437

[10] STATISTICAL CONSIDERATIONS IN MOSFET CALCULATIONS [J].

KAMINS, TI ;

MULLER, RS .

SOLID-STATE ELECTRONICS, 1967, 10 (05) :423-&

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