KINETICS OF NI/A-GE BILAYER REACTIONS

被引:25
作者
PATTERSON, JK [1 ]
PARK, BJ [1 ]
RITLEY, K [1 ]
XIAO, HZ [1 ]
ALLEN, LH [1 ]
ROCKETT, A [1 ]
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
ALLOYS; GERMANIUM; NICKEL; REACTION KINETICS;
D O I
10.1016/0040-6090(94)90366-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin film reactions between 100 nm of Ni and 400 nm of Ge deposited on thermally oxidized Si wafers have been studied as a function of annealing conditions, using X-ray diffraction (XRD), cross-sectional transmission electron microscopy, four-point kelvin resistance measurements and X-ray photoelectron spectroscopy (XPS); these last two techniques were carried out during reaction. The real-time resistance characteristic was nearly identical for temperature ramp rates between 3 and 50 degrees C min(-1) over the temperature range 20-550 degrees C, suggesting that the same basic reactions path dominates for all these conditions. The initial room temperature sheet resistance of the bilayer structure is about similar to 2 Omega/square and, upon annealing, goes through a local maximum of similar to 6 Omega/square at 300 degrees C. XPS indicates that Ge first appears on the sample surface, while XRD indicates the presence of monoclinic Ni5Ge3 at this sheet resistance maximum. Orthorhombic NiGe nucleates and grows between 300 and 400 degrees C. Analysis of resistance vs. time during isothermal annealings at 200-300 degrees C suggests the formation of NiGe through a thermally activated process with activation energy E(a) = 1.3 eV. At temperatures approaching 500 degrees C, XPS shows the disappearance of the Ni signal from the surface, indicating the onset of agglomeration.
引用
收藏
页码:456 / 461
页数:6
相关论文
共 19 条
[1]  
ALLEN LH, 1990, THESIS CORNELL U ITH
[2]   SCHOTTKY-BARRIER HEIGHTS OF W ON SI1-XGEX ALLOYS [J].
AUBRY, V ;
MEYER, F ;
WARREN, P ;
DUTARTRE, D .
APPLIED PHYSICS LETTERS, 1993, 63 (18) :2520-2522
[3]   A STUDY OF NI-GE INTERDIFFUSION ON GAAS USING RAPID THERMAL ANNEALING WITH TEMPERATURE STANDARDS [J].
BROOKS, MB ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) :1641-1648
[4]  
DONOVAN TM, 1971, PHYS REV LETT, V27, P1974
[5]   STRUCTURE CHANGE AND RESISTIVITY STEP OF EVAPORATED GE FILMS IN DEPENDENCE ON SUBSTRATE TEMPERATURE [J].
GOEBEL, H ;
DETTMER, K ;
KESSLER, FR .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01) :61-68
[6]   THERMAL-REACTION BETWEEN PT THIN-FILMS AND SIXGE1-X ALLOYS [J].
HONG, QZ ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) :611-615
[7]   COMPOSITION CONTROL AND GROWTH MECHANISMS IN SOLID-PHASE EPITAXY OF GE-SI IN GEXSI1-X/PD2SI/SI SYSTEMS [J].
HONG, QZ ;
MAYER, JW .
THIN SOLID FILMS, 1993, 223 (02) :235-241
[8]  
HONG QZ, 1991, THESIS CORNELL U ITH
[9]   INTERFACIAL REACTION BETWEEN A NI/GE BILAYER AND SILICON (100) [J].
LI, J ;
HONG, QZ ;
MAYER, JW ;
RATHBUN, L .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) :2506-2511
[10]   INTERFACIAL REACTIONS AND SCHOTTKY BARRIERS OF PT AND PD ON EPITAXIAL SI1-XGEX ALLOYS [J].
LIOU, HK ;
WU, X ;
GENNSER, U ;
KESAN, VP ;
IYER, SS ;
TU, KN ;
YANG, ES .
APPLIED PHYSICS LETTERS, 1992, 60 (05) :577-579