A NEW APPROACH TO BROAD-BAND MATCHING FOR P-I-N PHOTODIODES

被引：5
作者：
ZHU, ZM
GILLON, R
VORST, AV
机构：
[1] Microwave Laboratory, Université Catholique de Louvain, Louvain-La-Neuve
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1995年 / 8卷 / 01期
关键词：
CARRIER TRANSIT TIME; TRANSMISSION-LINE THEORY; FREQUENCY RESPONSE; BROAD-BAND MATCHING;
D O I：
10.1002/mop.4650080104
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microwave transmission-line theory has been applied to calculate p-i-n photodiode systems in which the carrier transit time, the geometric configuration, and the transmission-line characteristics were considered. The thickness of the intrinsic layer has been optimized to obtain a wide 3-dB bandwidth and a maximum gain-bandwidth product. A simulated result of 40-GHz bandwidth has been obtained for a device with a 20 x 20 mum2 p-i-n area. (C) 1995 John Wiley & Sons, Inc.
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页码：8 / 13
页数：6
相关论文
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