SURFACE PHOTOOXIDATION AND AG DEPOSITION ON AMORPHOUS GES2

被引：12

作者：

HORTON, JH ^{[1
]}

PEAT, KL ^{[1
]}

LAMBERT, RM ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT CHEM,LENSFIELD RD,CAMBRIDGE CB2 1EW,ENGLAND

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1993年 / 5卷 / 49期

关键词：

D O I：

10.1088/0953-8984/5/49/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Bandgap radiation in the presence of gaseous oxygen induces surface and selvedge photo-oxidation of amorphous GeS2. The phenomenon involves preferential oxidation of the Ge sites and may be understood in terms of the structural and electronic properties of GeS2. Such photo-oxidized films exhibit very different properties towards the subsequent deposition of Ag, as compared with untreated films. The inverse system (GeS2 deposition on Ag) exhibits markedly different interfacial properties, not previously recognized: this could have significant implications for the interpretation of bulk photodiffusion experiments.

引用

页码：9037 / 9048

页数：12

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