QUANTITATIVE PREDICTION OF HIGH-FIELD, SHORT PULSE BEHAVIOR OF AMORPHOUS-SEMICONDUCTORS

被引：1

作者：

WALSH, PJ ^{[1
]}

THOMPSON, MJ ^{[1
]}

ALLISON, J ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1981年 / 45卷 / 02期

关键词：

D O I：

10.1016/0022-3093(81)90188-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：209 / 227

页数：19

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[9] FIELD-DEPENDENT CARRIER TRANSPORT IN NON-CRYSTALLINE SEMICONDUCTORS [J].

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[10] PROPERTIES OF FILAMENTS IN AMORPHOUS-CHALCOGENIDE SEMICONDUCTING THRESHOLD SWITCHES [J].

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