ELECTRON-BEAM INDUCED CENTERS IN HYDROGENATED AMORPHOUS-SILICON

被引：29

作者：

SCHADE, H

PANKOVE, JI

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:1981469

中图分类号：

学科分类号：

摘要：

引用

页码：327 / 330

页数：4

共 11 条

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